Investigation of Bismuth Triiodide (BiI3) for Photovoltaic Applications

Guided by predictive discovery framework, we investigate bismuth triiodide (BiI3) as a candidate thin-film photovoltaic (PV) absorber. BiI3 was chosen for its optical properties and the potential for "defect-tolerant" charge transport properties, which we test experimentally by measuring optical absorption and recombination lifetimes. We synthesize phase-pure BiI3 thin films by physical vapor transport and solution processing and single-crystals by an electrodynamic gradient vertical Bridgman method. The bandgap of these materials is ∼1.8 eV, and they demonstrate room-temperature band-edge photoluminescence. We measure monoexponential recombination lifetimes in the range of 180-240 ps for thin films, and longer, multiexponential dynamics for single crystals, with time constants up to 1.3 to 1.5 ns. We discuss the outstanding challenges to developing BiI3 PVs, including mechanical and electrical properties, which can also inform future selection of candidate PV absorbers.