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Exploring Crystal Phase Switching in GaP Nanowires.

S Assali1, L Gagliano1, D S Oliveira2

  • 1Department of Applied Physics Eindhoven, University of Technology , 5600 MB Eindhoven, The Netherlands.

Nano Letters
|November 6, 2015
PubMed
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Researchers achieved precise control over wurtzite (WZ) and zincblende (ZB) segment lengths in GaP nanowires. Growth kinetics are governed by catalyst particle parameters, enabling band structure engineering for quantum systems.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Wurtzite/zincblende (WZ/ZB) superstructures offer advanced band structure engineering for quantum confined systems.
  • Precise control over segment lengths is crucial for tailoring energy spectra.

Purpose of the Study:

  • To investigate the growth kinetics of pure, defect-free WZ/ZB homostructures in GaP nanowires.
  • To achieve monolayer control over ZB and WZ segment lengths.

Main Methods:

  • Studying growth kinetics under varying gallium partial pressure and temperature.
  • Analyzing catalyst particle parameters, including Ga concentration and supersaturation.
  • Developing a nucleation model for WZ and ZB phase formation.
Keywords:
gallium phosphidemonolayer growthsemiconductor nanowiresupersaturationwurtzitezincblende

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Main Results:

  • Identified Ga concentration and catalyst supersaturation as key growth kinetics determinants.
  • Demonstrated tunability via gallium partial pressure and temperature.
  • Explained WZ nucleation at the triple phase line and ZB nucleation at the solid-liquid interface center.
  • Accounted for phase transition delay/offset times.

Conclusions:

  • Monolayer control of WZ/ZB segment lengths in GaP nanowires is achievable.
  • Growth kinetics are predictable and controllable through catalyst parameters.
  • The developed nucleation model accurately describes phase formation and transitions.