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Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection
Zhiming Huang1,2, Wei Zhou1, Jinchao Tong1
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.
Abstract:
Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.
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