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Updated: Mar 30, 2026

Finite Element Modelling of a Cellular Electric Microenvironment
Published on: May 18, 2021
Simulation of the enhancement factor from an individual 3D hemisphere-on-post field emitter by using finite elements
D S Roveri1, G M Sant'Anna1, H H Bertan1
1Plasma Laboratory, Department of Semiconductors, Instrumentation and Photonics, School of Electric and Computer Engineering, University of Campinas (UNICAMP), Cidade Universitária Zeferino Vaz, P.O.Box 6101, Barão Geraldo, Campinas, 13083-852 São Paulo, Brazil.
Abstract:
This paper presents a 3D computational framework for evaluating electrostatic properties of a single field emitter characterized by the hemisphere-on-post geometry. Numerical simulations employed the finite elements method by using Ansys-Maxwell software. Extensive parametric simulations were focused on the threshold distance from which the emitter field enhancement factor (γ) becomes independent from the anode-substrate gap (G). This investigation allowed demonstrating that the ratio between G and the emitter height (h) is a reliable reference for a broad range of emitter dimensions; furthermore, results permitted establishing G/h ≥ 2.2 as the threshold condition for setting the anode without affecting γ.
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