Related Experiment Video
Updated: Mar 30, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Theoretical investigation on the stability and properties of a (10,0) BN-AlN nanotube junction
L A Thesing1, P Piquini, T Kar
1Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS, Brazil.
Abstract:
The energetic, electronic and structural properties of a heterojunction formed by BN and AlN (10,0) nanotubes have been studied using first principles density functional theory. The differences between the AlN and BN nanotubes lead to structural rearrangements mainly at the junction layers. Two different types of junction occur, and net charges of opposite signs appear in each of them, with a resulting electric dipole along the heterojunction axis. The calculated band offset shows a staggered band line-up, with the heterojunction forming a one-dimensional array of quantum dots.
More Related Videos
09:20Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
09:34Synthesis and Characterization of Fe-doped Aluminosilicate Nanotubes with Enhanced Electron Conductive Properties
Published on: November 15, 2016
Related Concept Videos
P-N junction
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...