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Related Concept Videos

Equivalent Capacitance01:19

Equivalent Capacitance

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Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
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Equivalent Capacitance01:19

Equivalent Capacitance

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From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
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Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

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The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
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MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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Capacitors and Capacitance01:18

Capacitors and Capacitance

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A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
When the conductors are two identical parallel plates, it is called a parallel plate capacitor. When battery terminals are...
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Spherical and Cylindrical Capacitor01:26

Spherical and Cylindrical Capacitor

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A spherical capacitor consists of two concentric conducting spherical shells of radii R1 (inner shell) and R2 (outer shell). The shells have  equal and opposite charges of +Q and −Q, respectively. For an isolated conducting spherical capacitor, the radius of the outer shell can be considered to be infinite.
Conventionally, considering the  symmetry, the electric field between the concentric shells of a spherical capacitor is directed radially outward. The magnitude of the field,...
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Scanning-probe Single-electron Capacitance Spectroscopy
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Probing 2D black phosphorus by quantum capacitance measurements.

Manabendra Kuiri, Chandan Kumar, Biswanath Chakraborty

    Nanotechnology
    |November 13, 2015
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    Summary
    This summary is machine-generated.

    Quantum capacitance measurements reveal localized states in black phosphorus (BP) field-effect transistors (FETs). This technique offers unique insights into BP

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    Area of Science:

    • Condensed Matter Physics
    • Materials Science
    • Nanoscience

    Background:

    • Two-dimensional (2D) materials and heterostructures are crucial for fundamental physics and electronic/optoelectronic applications.
    • Black phosphorus (BP) is a 2D material with strong in-plane anisotropy, enabling novel electronic devices.
    • Experimental measurement of the global density of states (DOS) in BP device geometry is lacking.

    Purpose of the Study:

    • To experimentally measure the global density of states (DOS) of few-layer black phosphorus (BP).
    • To compare quantum capacitance measurements with density functional theory (DFT) calculations.
    • To investigate the electronic properties and localized states in BP using quantum capacitance and conductance measurements.

    Main Methods:

    • Fabrication of an hBN-protected few-layer black phosphorus (BP) field-effect transistor (FET).
    • Performance of quantum capacitance and conductance measurements on the BP FET device.
    • Analysis of temperature-dependent conductivity to identify transport mechanisms.

    Main Results:

    • Quantum capacitance measurements revealed a smaller transport gap than conductance measurements, attributed to localized states near the band edge.
    • Variable range hopping in temperature-dependent conductivity confirmed the presence of these localized states.
    • Significant asymmetry between electron and hole transport was observed, linked to BP's anisotropic band dispersion.

    Conclusions:

    • Quantum capacitance is a unique technique for probing localized states near the band edge in 2D materials, providing information not accessible through conductance measurements alone.
    • The study provides experimental validation of localized states in few-layer BP, impacting understanding for device applications.
    • The observed asymmetry highlights the anisotropic nature of BP, crucial for designing anisotropic electronic devices.