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Compact, 15 Gb/s electro-optic modulator through carrier accumulation in a hybrid Si/SiO(2)/Si microdisk
Optics Express
|November 13, 2015
Summary
This study presents a novel high-speed electro-optic modulator on a silicon photonic platform. The device achieves over 10 GHz bandwidth and 15 Gb/s data transmission, with self-trimming capabilities.
Area of Science:
- Photonics
- Electrical Engineering
- Materials Science
Background:
- High-speed electro-optic modulators are crucial for optical interconnects.
- Existing modulators often require power-hungry compensation methods.
Purpose of the Study:
- To design and demonstrate a novel electro-optic modulator.
- To utilize carrier accumulation on a multilayer integrated photonic platform.
- To achieve high-speed operation and wavelength self-trimming.
Main Methods:
- Design of a microdisk electro-optic modulator with an embedded capacitor.
- Fabrication on a multilayer Si/SiO(2)/Si integrated photonic platform.
- Characterization of operational bandwidth and data transmission rates.
Main Results:
- Demonstrated operation bandwidth exceeding 10 GHz.
- Achieved data transmission of 15 Gb/s using on-off keying.
- Exhibited wavelength self-trimming capability up to 1 nm via dc bias voltage.
Conclusions:
- The proposed modulator offers high-speed performance and efficient wavelength tuning.
- Self-trimming feature eliminates the need for power-intensive thermal compensation.
- This silicon photonic device is suitable for advanced optical interconnect systems.
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