Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

1.9K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.9K
π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

1.9K
An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
1.9K
π Electron Effects on Chemical Shift: Aromatic and Antiaromatic Compounds01:14

π Electron Effects on Chemical Shift: Aromatic and Antiaromatic Compounds

2.0K
In aromatic compounds, such as benzene, the circulation of (4n + 2) π-electrons sets up a diamagnetic or diatropic ring current around the perimeter of the molecule. This current induces a magnetic field that opposes the external field inside the ring and reinforces it on the outside. The protons in benzene are deshielded and exhibit high chemical shifts in the range 6.5–8.5 ppm. The shielding effect at the center of the ring is evident in complex aromatic molecules, such as...
2.0K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

810
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
810
NMR Spectroscopy: Chemical Shift Overview01:15

NMR Spectroscopy: Chemical Shift Overview

3.9K
The position of the absorption signal of a sample is reported relative to the position of the signal of tetramethylsilane (TMS), which is added as an internal reference while recording spectra. The difference between the absorption frequencies of the sample and TMS (in Hz) is divided by the spectrometer operating frequency (in MHz) to obtain a dimensionless quantity called the chemical shift. It is reported on the δ (delta) scale and expressed in parts per million.
For instance, the proton...
3.9K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.3K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Quintuplet Condensation in the Skyrmionic Insulator Cu_{2}OSeO_{3} at Ultrahigh Magnetic Fields.

Physical review letters·2026
Same author

Unveiling new quantum phases in the Shastry-Sutherland compound SrCu<sub>2</sub>(BO<sub>3</sub>)<sub>2</sub> up to the saturation magnetic field.

Nature communications·2023
Same author

Urine phthalate levels were associated with skin barrier dysfunction and atopic sensitization in children.

European review for medical and pharmacological sciences·2023
Same author

17-year trends of body mass index, overweight, and obesity among adolescents from 2005 to 2021, including the COVID-19 pandemic: a Korean national representative study.

European review for medical and pharmacological sciences·2023
Same author

National trends in suicide-related behaviors among youths between 2005-2020, including COVID-19: a Korean representative survey of one million adolescents.

European review for medical and pharmacological sciences·2023
Same author

Dimensional reduction and incommensurate dynamic correlations in the <math> </math> triangular-lattice antiferromagnet Ca<sub>3</sub>ReO<sub>5</sub>Cl<sub>2</sub>.

Nature communications·2022

Related Experiment Video

Updated: Mar 30, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K

Anomalous diamagnetic shifts in InP-GaP lateral quantum-wires.

Y H Shin, B K Choi, Yongmin Kim

    Optics Express
    |November 13, 2015
    PubMed
    Summary

    Investigating indium phosphide-gallium phosphide (InP-GaP) nanowires revealed distinct photoluminescence (PL) polarizations for type-I and type-II energy bands. Magnetic fields induced anomalous energy shifts in these PL peaks.

    More Related Videos

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
    15:47

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

    Published on: November 1, 2013

    17.1K
    Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots
    08:21

    Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots

    Published on: May 7, 2019

    10.5K

    Related Experiment Videos

    Last Updated: Mar 30, 2026

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
    05:39

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

    Published on: August 2, 2019

    10.5K
    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
    15:47

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

    Published on: November 1, 2013

    17.1K
    Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots
    08:21

    Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots

    Published on: May 7, 2019

    10.5K

    Area of Science:

    • Semiconductor Nanostructures
    • Materials Science
    • Solid-State Physics

    Background:

    • Indium phosphide-gallium phosphide (InP-GaP) lateral nanowires exhibit unique electronic properties due to their compositionally modulated structure.
    • Understanding the energy band alignment and optical characteristics is crucial for potential device applications.

    Purpose of the Study:

    • To investigate the polarized photoluminescence (PL) of InP-GaP lateral nanowires.
    • To analyze the influence of high pulsed magnetic fields on the optical properties.
    • To determine the relationship between energy band alignment and PL polarization.

    Main Methods:

    • Linearly polarized photoluminescence (PL) measurements were performed.
    • Experiments utilized pulsed magnetic fields up to approximately 50 Tesla.
    • Lateral composition modulation was employed for nanowire growth.

    Main Results:

    • Type-I and type-II energy bands were identified in In-rich and Ga-rich regions, respectively.
    • Type-I PL polarization aligned with the [11̄0] crystal direction, while type-II PL aligned with [110] in zero magnetic field.
    • Anomalous energy shifts in PL peaks were observed with varying magnetic field orientation.

    Conclusions:

    • The study elucidates the distinct optical polarization behaviors of type-I and type-II regions in InP-GaP nanowires.
    • Magnetic fields significantly affect the exciton energy landscape, leading to observable shifts in PL peaks.
    • These findings contribute to the fundamental understanding of optoelectronic properties in modulated semiconductor nanowires.