Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Substitutional doping challenges in low-dimensional nanomaterials lead to Schottky barrier Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs).
• Conventional transistor models are inadequate for Schottky barrier MOSFETs due to gate-dependent transmission through Schottky barriers.
• Previous research often resulted in inaccurate extraction of intrinsic properties like mobility for novel nanomaterials.

Purpose of the Study:

• To propose a simple, quantitative modeling approach for Schottky barrier MOSFETs with ultra-thin body materials.
• To accurately describe the transfer characteristics of these devices, particularly in the off-state.
• To enable reliable extraction of Schottky barrier heights in emerging nanomaterials.

Main Methods:

• Development of a novel, simplified modeling approach for Schottky barrier MOSFETs.
• Validation of the model using experimental data from ultra-thin silicon field-effect transistors.
• Application of the validated model to black phosphorus devices of varying body thicknesses.

Main Results:

• The proposed model accurately describes the transfer characteristics of Schottky barrier MOSFETs in the off-state.
• The model's validity was confirmed through analysis of ultra-thin silicon field-effect transistor data.
• Schottky barrier heights for electrons and holes were successfully extracted for black phosphorus across a range of body thicknesses.

Conclusions:

• The developed modeling approach provides an accurate and reliable method for characterizing Schottky barrier MOSFETs.
• This work overcomes limitations of conventional models, enabling precise property extraction for low-dimensional nanomaterials.
• The findings are significant for the advancement of field-effect transistors based on novel materials like black phosphorus.