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Published on: October 12, 2019
Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride
G J Slotman1, M M van Wijk1, Pei-Liang Zhao2
1Institute for Molecules and Materials, Radboud University, Heyendaalseweg 135, 6525AJ Nijmegen, The Netherlands.
Abstract:
We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moiré patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap.
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