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Published on: December 7, 2015
Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes
Ji-Yeon Park1, Keun Man Song1,2, Yo-Sep Min3
1Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.
Abstract:
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.
