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A Robust Highly Aligned DNA Nanowire Array-Enabled Lithography for Graphene Nanoribbon Transistors
Seok Hee Kang, Wan Sik Hwang1, Zhiqun Lin2
1Department of Materials Engineering, Korea Aerospace University , Goyang 412-791, Republic of Korea.
Nano Letters
|November 17, 2015
Summary
Researchers created highly aligned graphene nanoribbons using DNA nanowires as a resist. This method enables large-area, defect-controlled fabrication for advanced electronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics Engineering
Background:
- Graphene exhibits excellent charge carrier mobility, making it promising for high-performance electronic devices.
- Graphene nanoribbons and nanomesh are of particular interest for field-effect transistors.
Purpose of the Study:
- To develop a scalable method for fabricating highly aligned graphene nanoribbons.
- To utilize DNA nanowires as a lithographic resist for precise graphene patterning.
Main Methods:
- Crafting highly aligned DNA nanowire arrays via flow-assisted self-assembly.
- Transfer-printing DNA nanowires onto chemical vapor deposited (CVD)-grown graphene.
- Using DNA nanowires as a resist for selective graphene removal to form nanoribbons.
Main Results:
- Achieved large-area (millimeter scale) production of aligned graphene nanoribbons.
- Demonstrated high feature-size controllability and a low defect density in the fabricated nanoribbons.
- Successfully fabricated flexible two-terminal devices and field-effect transistors.
Conclusions:
- DNA nanowire arrays provide an effective and scalable lithographic approach for graphene nanoribbon fabrication.
- The developed method offers precise control over nanoribbon dimensions and defects.
- This technique facilitates the production of advanced graphene-based electronic devices, including flexible transistors.

