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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Carrier Transport01:21

Carrier Transport

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The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
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Magnetic Force Between Two Parallel Currents01:13

Magnetic Force Between Two Parallel Currents

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Two long, straight, and parallel current-carrying conductors exert a force of equal magnitude on one another. The direction of the force depends on the current direction in the conductors.
The force exerted by the magnetic field due to the first conductor over a finite length of the second conductor is given as the product of the current in the second conductor and  the vector product of the length vector along the current element and the field due to the first conductor. According to the...
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The Hall Effect01:30

The Hall Effect

5.1K
Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
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Boundary Conditions for Current Density01:25

Boundary Conditions for Current Density

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Current density becomes discontinuous across an interface of materials with different electrical conductivities. The normal component of the current density is continuous across the boundary.
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Related Experiment Video

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Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
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Entanglement discrimination in multi-rail electron-hole currents.

J P Baltanás1, D Frustaglia

  • 1Departamento de Física Aplicada II, Universidad de Sevilla, E-41012 Sevilla, Spain.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|November 17, 2015
PubMed
Summary
This summary is machine-generated.

We developed a quantum interferometer to entangle electrons and holes, acting as a witness to verify quantum entanglement. This method offers a practical alternative to existing entanglement verification techniques.

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Area of Science:

  • Quantum physics
  • Condensed matter physics

Background:

  • Quantum entanglement is a fundamental property of quantum mechanics, crucial for quantum information processing.
  • Verifying entanglement is essential for developing quantum technologies but faces experimental challenges.
  • Existing methods often rely on violating Bell inequalities, which can be difficult to implement.

Purpose of the Study:

  • To propose a novel quantum interferometer for entangling electrons and holes.
  • To develop an entanglement witness capable of discriminating spatial-mode and occupancy entanglement.
  • To provide a feasible alternative to entanglement verification methods based on Bell inequality violations.

Main Methods:

  • Integration of an electron-hole entangler and an analyzer within a quantum-Hall interferometer.
  • Implementation of a multi-rail encoding scheme for quantum information processing.
  • Utilizing the analyzer as an entanglement witness to detect and quantify entanglement properties.

Main Results:

  • Demonstration of an electron-hole entangler integrated into a quantum interferometer.
  • Development of an entanglement witness capable of distinguishing spatial-mode and occupancy entanglement.
  • Successful quantification of different types of entanglement within the proposed system.

Conclusions:

  • The proposed quantum interferometer provides a practical platform for generating and verifying electron-hole entanglement.
  • The entanglement witness effectively discriminates and quantifies spatial-mode and occupancy entanglement.
  • This approach offers a viable alternative to traditional methods for entanglement verification in quantum systems.