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A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
Published on: June 2, 2017
A flexoelectric microelectromechanical system on silicon
Umesh Kumar Bhaskar1, Nirupam Banerjee2, Amir Abdollahi1
1ICN2 - Institut Catala de Nanociencia i Nanotecnologia, CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona 08193, Spain.
Abstract:
Flexoelectricity allows a dielectric material to polarize in response to a mechanical bending moment and, conversely, to bend in response to an electric field. Compared with piezoelectricity, flexoelectricity is a weak effect of little practical significance in bulk materials. However, the roles can be reversed at the nanoscale. Here, we demonstrate that flexoelectricity is a viable route to lead-free microelectromechanical and nanoelectromechanical systems. Specifically, we have fabricated a silicon-compatible thin-film cantilever actuator with a single flexoelectrically active layer of strontium titanate with a figure of merit (curvature divided by electric field) of 3.33 MV(-1), comparable to that of state-of-the-art piezoelectric bimorph cantilevers.
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