Related Experiment Video
Updated: Mar 30, 2026

Micropunching Lithography for Generating Micro- and Submicron-patterns on Polymer Substrates
Published on: July 2, 2012
Electrical Characteristics of the Junction between PEDOT:PSS and Thiophene-Functionalized Silicon Microwires
Jared P Bruce1, Derek R Oliver2, Nathan S Lewis3
1Department of Chemistry, University of Manitoba , Winnipeg, Manitoba R3T 2N2, Canada.
Abstract:
Thiophene moieties have been attached to Si microwires (Si MWs) by a two-step chlorination/alkylation reaction method. X-ray photoelectron spectroscopy indicated that saturation of the surface occurred after 30 min of reaction time. Electrical measurements using a standard probe station indicated that the junction between individual thiophene-functionalized Si MWs and the conducting polymer poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (
Pedot:
PSS) became more ohmic as more thiophene was added to the MW surface. Under a light-limited current of 20 nA, representative of operation of Si MWs under 1 Sun illumination conditions, the iR loss of thiophene-n-Si MW/PEDOT-PSS contacts was 20 mV, representing an order of magnitude reduction compared with PEDOT-PSS junctions formed with methyl terminated n-Si MWs. Such iR losses are much less than typical catalytic overpotentials for fuel formation, and hence the thiophene-functionalized Si MW contacts will not limit the performance of a Si MW array-based solar fuels device under 1 Sun illumination.
Related Concept Videos
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

