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Updated: Mar 29, 2026
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2)
K Martens1,2,3, J W Jeong1, N Aetukuri1
1IBM Research-Almaden, San Jose, California 95120, USA.
Abstract:
The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13) cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3) cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2).
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