Probing the character of ultra-fast dislocations
C J Ruestes1, E M Bringa1, R E Rudd2
1Facultad de Ciencias Exactas y Naturales, Univ. Nac. de Cuyo, Mendoza 5500, Argentina.
Scientific Reports
|November 24, 2015
Summary
This study introduces a novel method to directly measure dislocation velocity under extreme stress conditions. Atomistic simulations predict a feasible experimental approach using shockwaves and electron microscopy for materials science.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Mechanics of Materials
Background:
- Plasticity is governed by dislocation motion, historically measured under low stress and strain rate conditions.
- Data on dislocation velocity at high stress conditions are scarce and often rely on indirect measurements.
- Existing methods are limited by dislocation density effects, hindering direct velocity assessment.
Purpose of the Study:
- To develop and validate a new experimental approach for directly measuring dislocation velocities under extreme stress conditions.
- To provide atomistic simulation-based predictions for guiding experimental design and interpretation.
- To explore phenomena occurring at extreme strain rates and stresses.
Main Methods:
- Atomistic simulations of tantalum to predict dislocation behavior under extreme conditions.
- Proposed experimental technique involving nanoindentation to create dislocation loops.
- Shockwave loading to drive dislocations and electron microscopy for measuring displacement and calculating velocity.
Main Results:
- Atomistic simulations provide detailed predictions of dislocation flow in tantalum.
- The proposed three-step method (nanoindentation, shockwave, electron microscopy) is predicted to be feasible.
- Simulations reveal potential for observing unique phenomena like transonic dislocations and loop stretching.
Conclusions:
- The developed simulation framework enables direct measurement of average dislocation velocity at very high applied shear stress.
- This approach opens new avenues for understanding material plasticity under extreme dynamic loading.
- The findings pave the way for novel experiments probing fundamental dislocation dynamics.
Related Concept Videos
Imperfections in Crystal Structure: Point, Line and Plane Defects
93
A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
93
Imperfections in Crystal Structure: Stoichiometric Point Defects
85
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
85
Displacement Current
4.0K
Ampère's law, in its usual form, does not work in places where the current changes with time and is not steady. Thus, Maxwell suggested including an additional contribution, called the displacement current, Id, to the real conduction current I.
4.0K


