High thermoelectric performance from optimization of hole-doped CuInTe2

Gang Zhou1, Dong Wang1

  • 1MOE Key Laboratory of Organic OptoElectronics and Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing 100084, People's Republic of China. dong913@tsinghua.edu.cn.

Summary

This study explores copper indium telluride (CuInTe2) for thermoelectric applications. Optimized p-type doping and defect engineering show promise for efficient waste heat recovery, achieving a figure of merit of 1.72 at 850 K.

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