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Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
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Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...
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Spin splitting in 2D monochalcogenide semiconductors.

Dat T Do1, Subhendra D Mahanti1, Chih Wei Lai1

  • 1Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824, USA.

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|November 25, 2015
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Spin splitting in layered monochalcogenides like GaS and InSe is minimal or zero, especially in noncentrosymmetric structures. This suppression of spin splitting enhances electron and hole spin relaxation times, offering potential for spintronic applications.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Computational Materials Science

Background:

  • Layered monochalcogenides (GaS, GaSe, GaTe, InSe) exhibit diverse polytypes and symmetries.
  • Understanding spin properties in these materials is crucial for spintronics.

Purpose of the Study:

  • To investigate the spin splitting of the uppermost valence band (UVB) and lowermost conduction band (LCB) in bulk and thin films of GaS, GaSe, GaTe, and InSe.
  • To compare spin splitting in these materials with conventional semiconductors like GaAs.

Main Methods:

  • Ab initio calculations were employed to determine spin splitting.
  • Analysis focused on the Γ-point in the Brillouin zone.

Main Results:

  • Noncentrosymmetric GaS, GaSe, and InSe (bulk and few-layer) show finite but smaller spin splittings than GaAs.
  • Centrosymmetric materials (including GaTe down to a single layer) exhibit zero spin splitting.
  • Band separation suppresses the Elliot-Yafet spin relaxation mechanism.

Conclusions:

  • Layered monochalcogenides offer suppressed spin relaxation mechanisms.
  • Zero or minimal spin splitting in these materials suggests longer electron and hole spin relaxation times compared to GaAs.
  • Potential for advanced spintronic devices.