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Network Covalent Solids02:18

Network Covalent Solids

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Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
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Many covalent molecules have central atoms that do not have eight electrons in their Lewis structures. These molecules fall into three categories:
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Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
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Metallic Solids02:37

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Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
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An atomic orbital represents the three-dimensional regions in an atom where an electron has the highest probability to reside. The radial distribution function indicates the total probability of finding an electron within the thin shell at a distance r from the nucleus. The atomic orbitals have distinct shapes which are determined by l, the angular momentum quantum number. The orbitals are often drawn with a boundary surface, enclosing densest regions of the cloud.
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Related Experiment Video

Updated: Mar 29, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
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Atomically thin layers of B-N-C-O with tunable composition.

Birol Ozturk1, Andres de-Luna-Bugallo2, Eugen Panaitescu3

  • 1Department of Physics, Northeastern University, Boston, MA 02115, USA. ; Electronic Materials Research Institute, Northeastern University, Boston, MA 02115, USA. ; Department of Physics and Engineering Physics, Morgan State University, Baltimore, MD 21251, USA.

Science Advances
|November 25, 2015
PubMed
Summary

Atomically thin 2D-BNCO alloys, incorporating boron, nitrogen, carbon, and oxygen, show stable configurations and tunable electronic properties. These novel materials exhibit potential for advanced nanoelectronics and spintronics.

Keywords:
alloyatomically thin sheetsborongraphenemagnetismnitrogenoxygentwo dimensional

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) alloys of boron, nitrogen, and carbon (2D-BNC) are tunable materials with significant research interest.
  • Incorporating oxygen into the 2D-BNC lattice presents an intriguing avenue for novel material properties.

Purpose of the Study:

  • To report the first synthesis and characterization of an atomically thin quaternary alloy of boron, nitrogen, carbon, and oxygen (2D-BNCO).
  • To investigate the structural stability, electronic transport, and magnetic properties of 2D-BNCO.

Main Methods:

  • Experimental synthesis of 2D-BNCO domains within a 2D-BNC matrix.
  • Density Functional Theory (DFT) calculations for structural and electronic property analysis.
  • Characterization of electronic transport properties via gate modulation and temperature dependence studies.

Main Results:

  • Stable honeycomb lattice configurations of 2D-BNCO were experimentally observed and theoretically corroborated.
  • Micrometer-scale 2D-BNCO domains were controllably synthesized within a graphene-rich 2D-BNC matrix.
  • Graphene-like electronic transport with high mobility (>500 cm2 V-1 s-1) and predicted magnetic ground states with sizable band gaps (0.6 eV < Eg < 0.8 eV) were demonstrated.

Conclusions:

  • Atomically thin 2D-BNCO is a stable quaternary alloy with tunable composition and controllable domain formation.
  • 2D-BNCO exhibits promising electronic and magnetic properties, suggesting its potential for next-generation nanoelectronic and spintronic devices.