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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Interface effects on acceptor qubits in silicon and germanium.

J C Abadillo-Uriel1, M J Calderón

  • 1Instituto de Ciencia de Materiales de Madrid, ICMM-CSIC, Cantoblanco, E-28049 Madrid, Spain.

Nanotechnology
|December 1, 2015
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Summary

Interfaces near dopants in silicon or germanium quantum computing can alter bound state energies and symmetry. This study explores these effects, finding ground state splitting and impacting optical transitions for acceptor qubits.

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Area of Science:

  • Quantum computing
  • Solid-state physics
  • Materials science

Background:

  • Dopant-based quantum computing requires dopants near interfaces for qubit manipulation.
  • Interfaces significantly alter the electronic properties of dopants, including energy levels and symmetry.

Purpose of the Study:

  • To investigate the impact of interfaces on acceptor energy spectra in silicon (Si) and germanium (Ge).
  • To understand how interface effects influence the symmetry and optical transitions of acceptor qubits.

Main Methods:

  • Utilized effective mass theory to model acceptor energy spectra.
  • Incorporated quantum confinement, dielectric mismatch, and central cell effects.
  • Analyzed the consequences of broken inversion symmetry and parity mixing.

Main Results:

  • Interfaces constrain allowed symmetries, leading to ground state splitting into two Kramers doublets.
  • Inversion symmetry breaking results in parity mixing.
  • Modified optical transitions are observed due to altered symmetries.

Conclusions:

  • Interface proximity critically affects acceptor qubit properties in Si and Ge.
  • Understanding these modifications is essential for designing and controlling acceptor-based quantum computing systems.
  • The observed spectral and symmetry changes have direct implications for qubit manipulation and readout.