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Updated: Mar 29, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Monolithically Integrated High-β Nanowire Lasers on Silicon.

B Mayer1, L Janker1, B Loitsch1

  • 1Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.

Nano Letters
|December 1, 2015
PubMed
Summary

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This summary is machine-generated.

Researchers achieved low-threshold lasing in nanowire lasers on silicon by adding a dielectric interlayer. This breakthrough promises efficient chip-level optical interconnects with high pulsation rates.

Area of Science:

  • Optoelectronics
  • Materials Science
  • Nanotechnology

Background:

  • Monolithic integration of lasers onto silicon is crucial for advanced optical interconnects.
  • III-V semiconductor nanowires (NWs) offer potential for on-chip lasers due to their unique properties.
  • Previous attempts at NW lasing on silicon were hindered by poor interface reflectivity.

Purpose of the Study:

  • To demonstrate low-threshold, single-mode lasing in nanowire lasers integrated on silicon.
  • To overcome the modal reflectivity limitations at the nanowire-silicon interface.
  • To explore the potential for high-speed optical communication applications.

Main Methods:

  • Fabrication of core-shell GaAs-AlGaAs nanowire lasers on silicon using epitaxial growth.
Keywords:
GaAs-AlGaAsNanowire lasersmonolithic integrationoptical pumping

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  • Introduction of a tailored dielectric interlayer at the nanowire-silicon interface.
  • Characterization of lasing performance, including threshold energy, spontaneous emission factor, and pulsation rates at low temperatures.

    • Main Results:

    • Achieved low-threshold, single-mode lasing in vertical-cavity nanowire lasers on silicon.
    • Measured a high spontaneous emission factor (β = 0.2), comparable to nanocavity lasers.
    • Demonstrated ultralow threshold pump energies (≤11 pJ/pulse) and potential for high pulsation rates (≥250 GHz).

    Conclusions:

    • The dielectric interlayer effectively enhances modal reflectivity, enabling efficient nanowire lasing on silicon.
    • These monolithic nanowire lasers exhibit high efficiency and speed, making them promising for chip-level optical interconnects.
    • This work represents a significant step towards realizing integrated silicon photonics for high-performance computing and communication.