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In situ probing of mode-locked vertical-external-cavity-surface-emitting lasers.

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    We used asynchronous optical sampling to study gain dynamics in mode-locked vertical-external-cavity-surface-emitting lasers (VECSELs). This method reveals rapid gain depletion and recovery processes on ultrafast timescales.

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    Area of Science:

    • Optoelectronics
    • Laser Physics
    • Semiconductor Devices

    Background:

    • Vertical-external-cavity-surface-emitting lasers (VECSELs) are crucial for various optical applications.
    • Understanding their gain dynamics under mode-locked operation is essential for optimizing performance.
    • Traditional pump/probe methods have limitations in directly characterizing intracavity gain dynamics.

    Purpose of the Study:

    • To investigate the ultrafast gain dynamics of VECSELs during mode-locked operation.
    • To employ an in situ characterization method for gain depletion and recovery.
    • To provide a more direct approach compared to conventional pump/probe techniques.

    Main Methods:

    • Utilized asynchronous optical sampling (AOS) technique.
    • Performed in situ characterization of gain dynamics.
    • Achieved femtosecond-scale resolution over nanosecond timescales.

    Main Results:

    • Observed rapid gain depletion synchronized with the intracavity pulse.
    • Characterized a picosecond-timescale recovery attributed to intraband scattering and carrier heating.
    • Identified a longer recovery phase linked to continuous carrier supply from the pump laser.

    Conclusions:

    • Asynchronous optical sampling offers a direct and high-resolution method for studying VECSEL gain dynamics.
    • Gain recovery involves multiple processes, including ultrafast carrier dynamics and slower carrier replenishment.
    • The findings provide critical insights for designing and improving mode-locked VECSELs.