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Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Low temperature solution process-based defect-induced orange-red light emitting diode.

Pranab Biswas¹, Sung-Doo Baek¹, Sang Hoon Lee¹

¹Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.

Scientific Reports

|December 10, 2015

Summary

Researchers developed a low-temperature, solution-processed light-emitting diode (LED) using copper oxide (CuO) and zinc oxide (ZnO) nanorods. This defect-induced oxide material offers promising orange-red light emission for cost-effective electronic devices.

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Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

Oxide semiconductors are crucial for electronic devices.
Low-temperature processing methods are desirable for cost-effectiveness.
Defect engineering in oxides can tune optoelectronic properties.

Purpose of the Study:

To fabricate and characterize a p-CuO nanorod/n-ZnO nanorod heterojunction light-emitting diode (LED).
To investigate the role of native point defects in ZnO nanorods for light emission.
To demonstrate a low-cost, low-temperature fabrication method for oxide-based LEDs.

Main Methods:

Synthesis of p-type CuO nanorods (NRs) at 100°C via microwave reaction.
Synthesis of n-type ZnO NRs at 90°C via hydrothermal method.
Fabrication and characterization of the CuO/ZnO heterojunction LED, including current-voltage measurements and electroluminescence spectroscopy.

Main Results:

Achieved p-type CuO NRs with a hole concentration of 9.64 × 10^18 cm^-3.
Demonstrated a high rectification ratio of 10^5 at 4 V for the heterojunction.
Observed broad orange-red emission peaking at 610 nm, attributed to defect-related transitions in ZnO NRs.

Conclusions:

Successfully fabricated a low-temperature, solution-processed oxide heterojunction LED.
Native point defects in ZnO NRs play a key role in the observed electroluminescence.
The study highlights a viable pathway for developing low-cost, defect-induced light-emitting devices using oxide nanomaterials.