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Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires

Iddo Amit1, Nari Jeon2, Lincoln J Lauhon2

  • 1Department of Physical Electronics-School of Electrical Engineering, Tel Aviv University , Ramat Aviv 69978, Tel Aviv, Israel.

ACS Applied Materials & Interfaces
|December 10, 2015
PubMed

Keywords:
Kelvin probe force microscopydiodedopant compensationdopingnanowirevapor−liquid−solid growth

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