Related Experiment Video
Updated: Mar 29, 2026

06:53
Scanning SQUID Study of Vortex Manipulation by Local Contact
Published on: February 1, 2017
7.4K
Suppression of Three-Dimensional Charge Density Wave Ordering via Thickness Control
Gideok Kim1,2, Michael Neumann1,2, Minu Kim1,2
1Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea.
Physical Review Letters
|December 10, 2015
Summary
Barium bismuth oxide thin films reveal that a minimum thickness of 11 unit cells is needed to stabilize the charge density wave and oxygen breathing distortion. Thinner films suppress these phenomena, offering new insights into bismuthate compounds.
Area of Science:
- Solid State Physics
- Materials Science
- Crystallography
Background:
- Barium bismuth oxide (BaBiO3) is a key material related to high-temperature superconductors.
- The undoped compound is an insulator with a charge density wave linked to oxygen sublattice distortions.
- Understanding these properties is crucial for developing new electronic materials.
Purpose of the Study:
- To investigate the influence of film thickness on the charge density wave and breathing distortion in BaBiO3.
- To determine the minimum thickness required to stabilize these phenomena.
- To explore the possibility of suppressing these features in ultrathin films.
Main Methods:
- Comprehensive spectroscopic analysis.
- X-ray diffraction studies.
- Fabrication and characterization of BaBiO3 thin films with varying thicknesses.
Main Results:
- A minimum film thickness of approximately 11 unit cells was identified as necessary to stabilize the breathing distortion and charge density wave.
- Both the breathing distortion and charge density wave were found to be suppressed in BaBiO3 films thinner than 11 unit cells.
- This suppression was achieved without intentional doping, marking a novel observation.
Conclusions:
- Film thickness is a critical parameter in stabilizing the charge density wave and breathing distortion in BaBiO3.
- Ultrathin BaBiO3 films offer a pathway to suppress these intrinsic electronic and structural features.
- These findings provide new avenues for manipulating properties in bismuthate materials.

