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Switching synchronization in one-dimensional memristive networks.

Valeriy A Slipko1, Mykola Shumovskyi1, Yuriy V Pershin2

  • 1Department of Physics and Technology, V. N. Karazin Kharkov National University, Kharkov 61022, Ukraine.

Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics
|December 15, 2015
PubMed
Summary
This summary is machine-generated.

Switching synchronization in memristive networks shows collective behavior when voltage exceeds thresholds. An analytical model explains memory resistance changes, matching simulation results for these memristive systems.

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Area of Science:

  • Physics
  • Materials Science
  • Electrical Engineering

Background:

  • Memristive networks are crucial for advanced electronic devices.
  • Understanding memristor switching dynamics is key to network behavior.

Purpose of the Study:

  • Investigate switching synchronization in 1D memristive networks.
  • Analyze the impact of varying switching constants on collective behavior.
  • Develop an analytical model for memristor network dynamics.

Main Methods:

  • Numerical simulations of one-dimensional memristive networks.
  • Analysis of memristor switching from high- to low-resistance states.
  • Development and application of an analytical model.

Main Results:

  • Observed switching synchronization phenomenon in memristive networks.
  • Collective behavior is pronounced when applied voltage slightly exceeds combined threshold voltage.
  • Network switching time increases compared to individual system switching times.
  • Derived asymptotic expressions for memory resistances.

Conclusions:

  • The study elucidates switching synchronization in memristive networks.
  • An analytical model accurately predicts network behavior and memory resistance.
  • Findings contribute to the understanding of memristor-based systems.