Performance Boosting of Flexible ZnO UV Sensors with Rational Designed Absorbing Antireflection Layer and Humectant
Heng Zhang1, Youfan Hu1, Zongpeng Wang2
1Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University , Beijing 100871, China.
Abstract:
Flexible ZnO thin film UV sensors with 3 orders of magnitude improvement in sensitivity and 2 orders of magnitude acceleration in speed are realized via light absorption efficiency enhancement and surface encapsulation. Devices are constructed on polyethylene substrate incorporating morphology controlled ZnO nanorod arrays (NRAs) as absorbing antireflection layers. By adjusting the morphology of ZnO NRAs, the light absorptance exceeds 99% through effectively trapping incident photons. As a result, the sensitivity of the UV sensor reaches 109 000. Moreover, a mechanism of competitive chemisorption between O2 and H2O at oxygen vacancy sites is proposed to explain the phenomenon of the speed acceleration in moist environment. A new approach of humectant encapsulation is used to make H2O participant rapid processes dominant for speed acceleration. Two orders of magnitude speed enhancement in reset time is achieved by polyethylene glycol encapsulation. After a total 3000 cycles bending test, the decay in the responsivity of UV sensor is within 20%, indicating good mechanical stability. All these results not only demonstrate a simple, effective and scalable approach to fabricate high sensitive and fast response flexible ZnO UV sensors, but also provide meaningful references for performance boosting of photoelectronic devices based on other oxide semiconductors.
