Related Experiment Video
Updated: Mar 28, 2026

Orientational Transition in a Liquid Crystal Triggered by the Thermodynamic Growth of Interfacial Wetting Sheets
Published on: May 15, 2017
Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compounds
Yaozhuang Nie1, Mavlanjan Rahman1, Daowei Wang1
1School of Physics and Electronics, Central South University, Changsha, 410083 China.
Abstract:
We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct gap semiconductor-topological insulator (TI) transitions with increasing strain from negative (compressive) to positive (tensile) values. The topological phase transition results from the band inversion at the Γ point which is due to the evolution of bonding and anti-bonding states under lattice strain.
Related Concept Videos
Phase Transitions
Phase Transitions
Metallic Solids
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
Phase Diagrams of Ternary Systems
Phase Transitions: Melting and Freezing
Valence Bond Theory

