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Pressure-induced electronic topological transition in Sb2S3
Y A Sorb1, V Rajaji, P S Malavi
1Chemistry and Physics of Materials Unit, JNCASR, Jakkur, Bangalore 560 064, India.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|December 15, 2015
Summary
High pressure studies reveal an electronic topological transition in antimony trisulfide (Sb2S3) at 4 GPa. This transition, evidenced by changes in phonon modes and resistivity, indicates strong phonon-phonon coupling.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid State Physics
Background:
- Antimony trisulfide (Sb2S3) is a wide bandgap semiconductor (Eg = 1.7-1.8 eV).
- Understanding its high-pressure behavior is crucial for potential applications in electronics and optoelectronics.
Purpose of the Study:
- To investigate the high-pressure vibrational properties of Sb2S3.
- To identify and characterize any pressure-induced electronic topological transitions.
Main Methods:
- High-pressure Raman spectroscopy up to 22 GPa.
- High-pressure resistivity measurements up to 11 GPa.
- Analysis of X-ray diffraction (XRD) data for structural information.
Main Results:
- Softening of specific phonon modes (A1g, B2g) and anomalies in their line widths observed around 4 GPa.
- Corroborating anomalies in resistivity measurements around similar pressures.
- Evidence of strong phonon-phonon coupling and an isostructural electronic topological transition.
Conclusions:
- The study confirms an isostructural electronic topological transition in Sb2S3 around 4-5 GPa.
- The transition is strongly linked to phonon behavior and coupling.
- Results are consistent with previously reported structural data (a/c ratio).
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