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Updated: Mar 28, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile,
Hasnain Ahmad1, Jayasimha Atulasimha2, Supriyo Bandyopadhyay1
1Dept. of Electrical and Computer Engr., Virginia Commonwealth University, Richmond, VA 23284, USA.
Abstract:
We report reversible strain-induced magnetization switching between two stable/metastable states in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically. This portends an ultra-energy-efficient non-volatile "non-toggle" memory.
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