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Updated: Mar 28, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control
Houfang Liu1, Ran Wang2, Peng Guo1
1Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Abstract:
Magnetization switching between parallel and antiparallel alignments of two magnetic layers in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external magnetic field or by an electric current. Here, we report that the manipulation of magnetization switching and tunnel magnetoresistance (TMR) in perpendicularly magnetized CoFeB/MgO/CoFeB MTJs can be achieved by both temperature and voltage. At a certain range of temperature, coercivity crossover between top and bottom magnetic layers is observed in which the TMR ratio of the MTJs is almost unmeasurable. Furthermore, the temperature range can be tuned reversibly by an electric voltage. Magnetization switching driven by the voltage reveals an unconventional phenomenon such that the voltage driven coercivity changes with temperature are quite different for top and bottom CoFeB layers. A model based on thermally-assisted domain nucleation and propagation is developed to explain the frequency and temperature dependence of coercivity. The present results of controlling the magnetization switching by temperature and voltage may provide an alternative route for novel applications of MTJs based spintronic devices.
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