Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits
Yaw Obeng1, C A Okoro1, Jung-Joon Ahn1
1Engineering Physics Division, Physical Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899.
ECS Transactions
|December 15, 2015
Summary
Reliability issues in 3D integrated circuits (3D-ICs) are addressed by a new RF-based dielectric spectroscopy method. This technique detects defects in through-silicon vias (TSVs) linked to dielectric chemistry, potentially explaining early device failures.
Area of Science:
- Electrical Engineering
- Materials Science
- Semiconductor Physics
Background:
- Commercialization of 3D integrated circuits (3D-ICs) faces significant reliability hurdles.
- Observed failures include stress-induced issues, resistivity shifts, and premature device malfunction.
- These challenges impede the widespread adoption and dependable performance of 3D-IC technologies.
Purpose of the Study:
- To introduce a novel radio-frequency (RF)-based metrology for assessing reliability in 3D-ICs.
- To detect and characterize electrically active defects within fully integrated 3D devices.
- To establish a link between dielectric material chemistry in through-silicon vias (TSVs) and device reliability.
Main Methods:
- Utilizing dielectric spectroscopy, an RF-based technique, for defect analysis.
- Applying the method to fully integrated 3D devices incorporating TSVs.
- Correlating observed electrical defects with the chemical properties of inter-layer dielectrics.
Main Results:
- The RF-based dielectric spectroscopy successfully detects and characterizes electrically active defects.
- These defects are demonstrably linked to the chemistry of dielectrics used in TSV fabrication.
- A strong correlation is found between these defects and unexplained early reliability failures in 3D-ICs.
Conclusions:
- The developed RF-based metrology offers a viable solution for identifying critical defects in 3D-ICs.
- The chemistry of dielectrics in TSVs is a key factor influencing device reliability.
- This research provides insights into the root causes of early failures in TSV-enabled 3D devices.
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