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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

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High I on/I off current ratio graphene field effect transistor: the role of line defect

Mohammad Hadi Tajarrod1, Hassan Rasooli Saghai1

  • 1Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran.

Beilstein Journal of Nanotechnology
|December 15, 2015
PubMed

Keywords:
field effect transistorgrapheneline defect

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