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Related Concept Videos

¹H NMR: Long-Range Coupling01:27

¹H NMR: Long-Range Coupling

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The coupling interactions of nuclei across four or more bonds are usually weak, with J values less than 1 Hz. While these are usually not observed in spectra, the presence of multiple bonds along the coupling pathway can result in observable long-range coupling.
In alkenes, spin information is communicated via σ–π overlap, as seen in allylic (four-bond) and homoallylic (five-bond) couplings. These coupling interactions are stronger when the σ bond is parallel to the alkene...
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Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

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Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.3K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)01:22

Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)

1.7K
Vicinal or three-bond coupling is commonly observed between protons attached to adjacent carbons. Here, nuclear spin information is primarily transferred via electron spin interactions between adjacent C‑H bond orbitals. This generally favors the antiparallel arrangement of spins, so 3J values are usually positive.
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the involved orbitals. The...
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Hybridization of Atomic Orbitals II03:35

Hybridization of Atomic Orbitals II

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sp3d and sp3d 2 Hybridization
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Related Experiment Video

Updated: Mar 28, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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Interface Engineering in Two-Dimensional Heterostructures: Towards an Advanced Catalyst for Ullmann Couplings.

Xu Sun1, Haitao Deng1, Wenguang Zhu2,3

  • 1Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center (CAS), CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China.

Angewandte Chemie (International Ed. in English)
|December 17, 2015
PubMed
Summary

Interface engineering of 2D heteronanostructures enhances catalyst electropositivity, boosting performance in organic reactions like Ullmann coupling. This novel approach offers superior yields and recyclability for advanced catalyst design.

Keywords:
Ullmann reactioncatalysiselectrophilicityinterface engineeringnucleophilicity

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Area of Science:

  • Materials Science
  • Catalysis
  • Organic Chemistry

Background:

  • Electrophilicity and nucleophilicity are crucial for activating chemical bonds in organic reactions.
  • Designing advanced catalysts is essential for efficient organic transformations.

Purpose of the Study:

  • To develop a new method for regulating catalyst electro- and nucleophilicity.
  • To investigate the application of interface engineering in two-dimensional (2D) heteronanostructures for catalysis.

Main Methods:

  • Interface engineering of 2D heteronanostructures (Cu2S/MoS2) to induce interfacial electron transfer.
  • Utilizing the engineered catalyst in Ullmann coupling reactions.

Main Results:

  • Interface engineering rendered the catalyst more electropositive, enhancing its performance.
  • The engineered 2D Cu2S/MoS2 heteronanostructure achieved 92% yield in Ullmann coupling of iodobenzene and para-chlorophenol under mild conditions (100°C).
  • The catalyst demonstrated excellent stability and recyclability, with 89% yield after five cycles.

Conclusions:

  • Interface engineering is a viable strategy for tuning catalyst properties.
  • This approach can be widely applied to develop novel catalysts for various organic reactions.
  • The engineered 2D Cu2S/MoS2 heteronanostructure shows significant promise for efficient and sustainable organic synthesis.