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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

Shengli Zhang1, Meiqiu Xie1, Fengyu Li2

  • 1Institute of Optoelectronics & Nanomaterials, Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.

Angewandte Chemie (International Ed. in English)
|December 17, 2015
PubMed

Keywords:
2D semiconductorsGroup 15 monolayersbroadband photoresponsedensity functional calculationshigh mobility

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