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Published on: December 7, 2017
Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon
Michael D Thompson1, Aiyeshah Alhodaib1, Adam P Craig1
1Department of Physics, Lancaster University , Lancaster, LA1 4YB, United Kingdom.
Abstract:
Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

