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Updated: Mar 28, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as
Meng-Lin Tsai1,2, Wei-Chen Tu1, Libin Tang3
1Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Kingdom of Saudi Arabia.
Abstract:
By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm(2) and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultrahigh efficiency photovoltaic cells in the future.
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