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Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Mode-evolution-based polarization rotation and coupling between silicon and hybrid plasmonic waveguides.

Sangsik Kim1, Minghao Qi1

  • 1School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 USA.

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This study introduces a novel structure for efficient coupling of light into hybrid plasmonic (HP) modes. The device achieves high coupling efficiency and broad wavelength operation for on-chip photonic applications.

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Area of Science:

  • Photonics
  • Nanophotonics
  • Plasmonics

Background:

  • Hybrid plasmonic (HP) modes offer strong optical confinement and low propagation loss for on-chip photonic devices.
  • Low coupling efficiency between dielectric guided modes and HP modes hinders practical implementation due to mode mismatch and polarization differences.

Purpose of the Study:

  • To develop a mode-evolution-based structure for efficient polarization rotation and coupling of TE modes to HP modes.
  • To overcome the limitations of existing methods for integrating dielectric waveguides with plasmonic structures.

Main Methods:

  • A mode-evolution-based polarization rotation and coupling structure was designed and simulated.
  • The structure adiabatically rotates the TE mode in a silicon waveguide and couples it to the HP mode in a silicon-dielectric-metal waveguide.
  • Simulations were performed using various metal caps (Ag, Au, Al, Cu) to assess coupling factors and conversion lengths.

Main Results:

  • High coupling factors were achieved: 92% (Ag), 78% (Au), 75% (Al), and 73% (Cu) at a conversion length of ~5 μm.
  • A coupling factor >64% was maintained over an ultra-broad wavelength range (1300-1800 nm) with a Ag metal cap.
  • Total back-reflection power was below -40 dB due to adiabatic mode transition, indicating minimal signal loss.

Conclusions:

  • The proposed device enables efficient and broadband coupling to hybrid plasmonic modes.
  • The design is tolerant to fabrication variations and does not require high-resolution lithography, making it suitable for mass production.
  • This technology is promising for optical transport systems across all telecommunication bands.