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Updated: Mar 28, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Highly Asymmetric n(+)-p Heterojunction Quantum-Dot Solar Cells with Significantly Improved Charge-Collection
Min-Jae Choi1, Sunchuel Kim1, Hunhee Lim1
1Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-guDaejeon, 305-701, Republic of Korea.
Abstract:
The depletion region width of metal-oxide/quantum-dot (QD) heterojunction solar cells is increased by a new method in which heavily boron-doped n(+)-ZnO is employed. It is effectively increased in the QD layer by 30% compared to the counterpart with conventional n-ZnO, and provides 41% and 37% improvement of J(sc) (16.7 mA cm(-2) to 23.5 mA cm(-2) ) and power conversion efficiency (5.52% to 7.55%), respectively.
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