Epitaxial integration of a nanoscale BiFeO3 phase boundary with silicon
Wen-I Liang1, Chun-Yen Peng1, Rong Huang2
1Department of Materials Science and Engineering, National Chiao Tung University, HsinChu, 30010, Taiwan, Republic of China.
Nanoscale
|December 23, 2015
Abstract:
The successful integration of the strain-driven nanoscale phase boundary of BiFeO3 onto a silicon substrate is demonstrated with extraordinary ferroelectricity and ferromagnetism. The detailed strain history is delineated through a reciprocal space mapping technique. We have found that a distorted monoclinic phase forms prior to a tetragonal-like phase, a phenomenon which may correlates with the thermal strain induced during the growth process.
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