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Finding Oxygen Reservoir by Using Extremely Small Test Cell Structure for Resistive Random Access Memory with
Kentaro Kinoshita1,2,3, Sang-Gyu Koh1, Takumi Moriyama1,2
1Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Scientific Reports
|December 23, 2015
Summary
Researchers pinpointed the oxygen reservoir's location in resistive switching (RS) within resistive random access memory (ReRAM) devices. The oxygen reservoir's position depends on the anode's Gibbs free energy, influencing the reset mechanism.
Area of Science:
- Materials Science
- Solid-State Physics
- Electrical Engineering
Background:
- Resistive switching (RS) in resistive random access memory (ReRAM) is crucial for next-generation electronics.
- The precise location of the oxygen reservoir (OR) in electrode/metal oxide (MO)/electrode structures remains unclear.
- Existing models often assume an OR, but experimental verification is lacking.
Purpose of the Study:
- To experimentally determine the location of the oxygen reservoir (OR) in ReRAM devices.
- To investigate the role of the anode material in the resistive switching reset mechanism.
- To correlate the anode's properties with the OR's behavior during device operation.
Main Methods:
- Utilized a specialized ReRAM cell structure with a removable bottom electrode (BE), fabricated using an Atomic Force Microscopy (AFM) cantilever.
- Systematically varied the anode material while keeping the metal oxide (MO) layer and cathode constant.
- Analyzed the impact of anode catalytic ability and Gibbs free energy (ΔG) on the reset process.
Main Results:
- The reset mechanism was found to be independent of the anode's catalytic ability and Gibbs free energy (ΔG).
- When using high ΔG anode metals, reset occurred due to oxygen vacancy repair in the filament via oxygen ion migration from the surroundings.
- When using low ΔG anode metals, reset occurred due to anode oxidation via oxygen ion migration from the MO layer.
Conclusions:
- The location of the oxygen reservoir (OR) is not fixed and depends on the Gibbs free energy (ΔG) of the anode material.
- This finding clarifies the OR's role in resistive switching mechanisms.
- The proposed ReRAM cell structure is effective for localizing the OR and understanding RS phenomena.
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