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A new EXAFS method for the local structure analysis of low-Z elements.

Noritake Isomura1, Masao Kamada2, Takamasa Nonaka1

  • 1Toyota Central R&D Laboratories, 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan.

Journal of Synchrotron Radiation
|December 25, 2015
PubMed
Summary

A new differential electron yield (DEY)-EXAFS method accurately analyzes local structures for low-Z elements. This technique isolates true extended X-ray absorption fine structure (EXAFS) spectra, improving surface analysis accuracy.

Keywords:
Auger electronsEXAFSXASenergy analyzersilicon nitride

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Area of Science:

  • Materials Science
  • Surface Science
  • Spectroscopy

Background:

  • Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy is crucial for local structure analysis.
  • Existing methods like Total Electron Yield (TEY) can be affected by secondary electron interference, especially for low-Z elements.
  • Accurate elemental analysis of materials like silicon nitride requires precise EXAFS data.

Purpose of the Study:

  • To propose and validate a novel analytical method, differential electron yield (DEY)-EXAFS, for local structure analysis.
  • To demonstrate the method's capability in obtaining true EXAFS spectra, free from interfering signals.
  • To confirm the method's efficacy for low-Z elements by analyzing a silicon nitride film.

Main Methods:

  • Utilizing an electron energy analyzer to measure electron energy distribution curves at various excitation photon energies.
  • Applying dual-energy windows for simultaneous measurement of Auger and background spectra.
  • Subtracting background spectra from measured curves to isolate specific elemental EXAFS signals.
  • Implementing the differential electron yield (DEY)-EXAFS technique.

Main Results:

  • Successfully obtained the N K-edge EXAFS spectra for a silicon nitride film.
  • The background subtraction effectively removed photoelectrons and secondary electron interference.
  • The derived N-Si nearest-neighbor distance closely matched results from Si K-edge analysis.
  • The DEY-EXAFS method provided accurate local surface structure information.

Conclusions:

  • The differential electron yield (DEY)-EXAFS method is a valid and effective technique for local structure analysis.
  • This method overcomes limitations of traditional methods, offering improved accuracy for low-Z elements.
  • DEY-EXAFS enables precise determination of local atomic arrangements and bonding in materials.