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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Types of Semiconductors01:20

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
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Vertical silicon waveguide coupler bent by ion implantation.

Tomoya Yoshida, Syougo Tajima, Ryohei Takei

    Optics Express
    |December 25, 2015
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    Summary

    Vertically curved waveguides (VCWs) offer low-loss, wavelength-independent coupling for optical fibers. Ion implantation bends silicon waveguides, enabling efficient vertical light transfer for telecommunications.

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    Area of Science:

    • Photonics
    • Materials Science
    • Optical Engineering

    Background:

    • Efficient vertical coupling between silicon waveguides and optical fibers is crucial for integrated photonic devices.
    • Existing methods often suffer from wavelength or polarization dependence, limiting their application in telecommunications.

    Purpose of the Study:

    • To propose and demonstrate vertically curved waveguides (VCWs) for low-loss, polarization-independent, and wavelength-independent vertical coupling.
    • To investigate the use of ion implantation for inducing stress and bending silicon waveguides.

    Main Methods:

    • Fabrication of silicon wire cantilevers.
    • Vertical ion implantation of silicon ions to induce internal stress and drive waveguide bending.
    • Characterization of waveguide curvature and optical coupling performance.

    Main Results:

    • Achieved vertical bending of silicon waveguides with curvature radii from 3 to 25 μm.
    • Demonstrated low wavelength and polarization dependence for coupling over the telecommunication wavelength band.
    • Obtained a coupling loss of 3 dB at a 6 μm radius of curvature using a lens fiber.

    Conclusions:

    • Vertically curved waveguides fabricated by ion implantation offer a promising solution for efficient vertical fiber-to-waveguide coupling.
    • The developed method provides low loss and broad operational bandwidth, suitable for telecommunication applications.