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Nanogenerators based on vertically aligned InN nanowires.

Guocheng Liu1, Songrui Zhao2, Robert D E Henderson3

  • 1Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave. West, Waterloo, Ontario N2L3G1, Canada. g37liu@uwaterloo.ca dban@uwaterloo.ca.

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Vertically aligned indium nitride (InN) nanowire piezoelectric nanogenerators show enhanced performance with p-type doping. This advancement offers improved power output for self-powered electronic systems.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Energy Harvesting

Background:

  • Piezoelectric nanogenerators (NGs) are crucial for self-powered systems.
  • Indium nitride (InN) nanowires (NWs) offer potential for piezoelectric applications.
  • Optimizing NW properties is key to enhancing NG performance.

Purpose of the Study:

  • To fabricate and evaluate piezoelectric NGs using vertically aligned InN nanowires.
  • To compare the performance of p-type and intrinsic InN NW based NGs.
  • To identify factors contributing to performance differences in InN NGs.

Main Methods:

  • Fabrication of vertically aligned InN nanowire arrays using plasma-assisted molecular beam epitaxy (MBE).
  • Characterization of piezoelectric properties of both p-type and intrinsic InN NWs.
  • Evaluation of output current and power product for different InN NW configurations.

Main Results:

  • Both p-type and intrinsic InN NWs exhibit similar piezoelectric properties.
  • p-type InN NGs demonstrate a 160% increase in output current and a 70% increase in output power product compared to intrinsic NGs.
  • Performance enhancements are attributed to reduced electrostatic losses, improved electromechanical conversion efficiency due to smaller NW diameters, and higher impedance from surface charges.

Conclusions:

  • Indium nitride based nanogenerators show significant potential as power sources for self-powered devices.
  • NW array morphology, NW diameter, and surface charge levels critically influence nanogenerator performance.
  • P-type doping in InN nanowires can substantially boost piezoelectric nanogenerator output.