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Thermally Driven Pure Spin and Valley Currents via the Anomalous Nernst Effect in Monolayer Group-VI Dichalcogenides
Xiao-Qin Yu1,2, Zhen-Gang Zhu1,3, Gang Su3
1School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Abstract:
The spin and valley-dependent anomalous Nernst effects are analyzed for monolayer MoS_{2} and other group-VI dichalcogenides. We find that pure spin and valley currents can be generated perpendicular to the applied thermal gradient in the plane of these two-dimensional materials. This effect provides a versatile platform for applications of spin caloritronics. A spin current purity factor is introduced to quantify this effect. When time reversal symmetry is violated, e.g., two-dimensional materials on an insulating magnetic substrate, a dip-peak feature appears for the total Nernst coefficient. For the dip state it is found that carriers with only one spin and from one valley are driven by the temperature gradient.
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