Related Experiment Video
Updated: Mar 28, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown
V A Soltamov1, B V Yavkin2, D O Tolmachev1
1Ioffe Physical Technical Institute, St. Petersburg 194021, Russia.
Abstract:
We discovered a family of uniaxially oriented silicon vacancy-related centers with S=3/2 in a rhombic 15R-SiC crystalline matrix. We demonstrate that these centers exhibit unique characteristics such as optical spin alignment up to the temperatures of 250°C. Thus, the range of robust optically addressable vacancy-related spin centers is extended to the wide class of rhombic SiC polytypes. To use these centers for quantum applications it is essential to know their structure. Using high frequency electron nuclear double resonance, we show that the centers are formed by negatively charged silicon vacancies V_{Si}^{-} in the paramagnetic state with S=3/2 that is noncovalently bonded to the neutral carbon vacancy V_{C}^{0} in the nonparamagnetic state, located on the adjacent site along the SiC symmetry c axis.
More Related Videos
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Related Concept Videos
Valence Bond Theory
Imperfections in Crystal Structure: Stoichiometric Point Defects
Radicals: Electronic Structure and Geometry
Accordingly, the structure of a trivalent radical lies between the geometries of carbocations and carbanions. An sp2-hybridized carbocation is trigonal planar, while an sp3-hybridized carbanion is trigonal pyramidal. Here, the difference in geometry is...
Types of Semiconductors
Imperfections in Crystal Structure: Non-Stoichiometric Defects