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On the mechanism of ultrasonic loading effect in silicon-based Schottky diodes

Oleg Olikh1, Katerina Voytenko1

  • 1Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska Street, Kyiv 01601, Ukraine.

Ultrasonics
|December 29, 2015
PubMed

Keywords:
Current–voltage characteristicsShottky diodeSiliconUltrasound influence features

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