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Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain
Seunghyun Song1, Dong Hoon Keum1, Suyeon Cho1
1Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, Department of Physics, and §School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 440-746, Korea.
Abstract:
We demonstrate a room temperature semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T' phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance ∼10 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.
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