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Temperature-Dependent Photoluminescence of g-C3N4: Implication for Temperature Sensing
Debanjan Das1, S L Shinde1, K K Nanda1
1Materials Research Centre, Indian Institute of Science , Bangalore 560012, India.
Abstract:
We report the temperature-dependent photoluminescence (PL) properties of polymeric graphite-like carbon nitride (g-C3N4) and a methodology for the determination of quantum efficiency along with the activation energy. The PL is shown to originate from three different pathways of transitions: σ*-LP, π*-LP, and π*-π, respectively. The overall activation energy is found to be ∼73.58 meV which is much lower than the exciton binding energy reported theoretically but ideal for highly sensitive wide-range temperature sensing. The quantum yield derived from the PL data is 23.3%, whereas the absolute quantum yield is 5.3%. We propose that the temperature-dependent PL can be exploited for the evaluation of the temperature dependency of quantum yield as well as for temperature sensing. Our analysis further indicates that g-C3N4 is well-suited for wide-range temperature sensing.
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